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| CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 10A , RDS(ON)=1 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 30 10 30 10 156 1.25 -55 to 150 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 4-172 0.8 62.5 C/W C/W CEP10N6/CEB10N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=11.8mH RG=25 Min Typ Max Unit 4 4 DRAIN-SOURCE AVALANCHE RATING EAS IAS 500 10 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b VGS = 0V,ID = 250A VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250A VGS =10V, ID = 5A VGS = 10V, VDS = 10V VDS = 40V, ID = 5A VDD =300V, ID = 10A, VGS = 10V RGEN=25 600 100 V A 100 nA ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 2 4 0.75 1.0 10 9 35 90 170 120 55 VDS =480V, ID = 10A, VGS =10V 4-173 V A S SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 70 170 255 180 70 ns ns ns ns nC nC nC 9 22 CEP10N6/CEB10N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage Symbol CISS COSS CRSS a Condition Min Typ Max Unit 1500 125 50 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ DRAIN-SOURCE DIODE CHARACTERISTICS VSD VGS = 0V, Is =10A 1.6 V Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 12 VGS=10,9,8,7V 10 10 ID, Drain Current(A) 8 6 4 2 0 0 2 4 6 8 10 12 VGS=6V ID, Drain Current (A) 1 150 C -55 C VGS=5V 25 C 1.VDS=40V 2.Pulse Test 0.1 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 4-174 CEP10N6/CEB10N6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1800 Ciss 1500 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 ID=5A VGS=10V C, Capacitance (pF) 1200 900 600 300 0 0 5 10 15 20 25 Coss Crss 4 VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A Figure 4. On-Resistance Variation with Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 12 Figure 6. Breakdown Voltage Variation with Temperature 20 10 VGS=0V gFS, Transconductance (S) VDS=40V 9 6 Is, Source-drain current (A) 0 2 4 6 8 1 3 0 0.1 0.4 0.6 0.8 1.0 1.2 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 4-175 Figure 8. Body Diode Forward Voltage Variation with Source Current CEP10N6/CEB10N6 VGS, Gate to Source Voltage (V) 15 12 9 6 3 0 0 20 40 60 80 Qg, Total Gate Charge (nC) ID, Drain Current (A) Lim 4 VDS=480V ID=5A it 10 0 s 1m 10 1 s 10 m s N) D (O C 10 0 TC=25 C Tj=150 C Single Pulse 10 1 10 2 10 3 10 -1 10 0 RD S VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 4-176 |
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